TS ECET EEE 2020-9

1. To make a n-type semiconductor the impurity to be added is _____

A. phosphorous
B. Indium
C. Arsenic
D. Antimony

Answer : B. Indium
Explanation:-

2. In zener diode, the break down voltage is higher for _____ doped dioded

A. Lightly
B. Moderately
C. Heavily
D. More heavily

Answer : A. Lightly
Explanation:-

3. For a bridge rectifier peak inverse voltage (PIV) is ____ volts

A. -Vm
B. 0
C. Vm
D. 2Vm

Answer : C. Vm
Explanation:-

4. In common Emitter(CE) configuration, the purpose of bypass capacitor across the bypass resistance is to ______

A. increases emitter current
B. improve the stability factor
C. decreases the output signal
D. increase the output signal

Answer : D. increase the output signal
Explanation:-

5. Unijunction transistor (UJT) cannot be used as

A. amplifier
B. sawtooth waveform generator
C. switch
D. multivibrator

Answer : A. amplifier
Explanation:-

6. In JFET at pinch off, the drain current becomes

A. 0
B. 1
C. constant
D. infinite

Answer : C. constant
Explanation:-

7. In an oscillator circuit, the transistor operates in

A. class A
B. class B
C. class AB
D. class C

Answer : A. class A
Explanation:-

8. The typical values of h parameters for BJT in CE configuration are

A. hie=10kohm, hfe=100, hre=10x10^-4, hoe=10x10^-6 S
B. hie=1kohm, hfe=100, hre=10x10^-4, hoe=10x10^-6 S
C. hie=1kohm, hfe=100, hre=10x10^4, hoe=10x10^-6 S
D. hie=10kohm, hfe=100, hre=10x10^4, hoe=10x10^6 S

Answer : B. hie=1kohm, hfe=100, hre=10x10^-4, hoe=10x10^-6 S
Explanation:-

9. A latch can be made by two cross-coupled _____ gates

A. AND
B. OR
C. NOR
D. NOT

Answer : C. NOR
Explanation:-

10. The range of values that can be represented by 'b' bits using 2's complement representation is

A. -2^(b-1) to 2^(b-1)
B. 1-2^(b-1) to 2^(b-1)-1
C. -1-2^(b-1) to 2^(b-1)-1
D. -2^(b-1) to 2^(b-1)-1

Answer : D. -2^(b-1) to 2^(b-1)-1
Explanation:-